TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs.
A. N. Tallarico, M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and C. Fiegna 
(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(2). p.507-513

Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs.
Arno Stockman (UGent) , Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Peter Moens and Benoit Bakeroot (UGent) 
(2021) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 21(2). p.169-175

Surface-potential-based compact modeling of p-GaN gate HEMTs.
Jie Wang, Zhanfei Chen, Shuzhen You, Benoit Bakeroot (UGent) , Jun Liu and Stefaan Decoutere 
(2021) MICROMACHINES. 12(2).